TYPE | DESCRIPTION |
Fet Type: | Dual P-Ch |
No of Channels: | 2 |
Drain-to-Source Voltage [Vdss]: | -60V |
Drain-Source On Resistance-Max: | 130mΩ |
Rated Power Dissipation: | 1.8W |
Qg Gate Charge: | 8.2nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | -3.3A |
Turn-on Delay Time: | 4.4ns |
Turn-off Delay Time: | 34ns |
Rise Time: | 23ns |
Fall Time: | 42ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | -3V |
Technology: | Si |
Height - Max: | 1.75mm |
Length: | 4.95mm |
Input Capacitance: | 969pF |
Package Style: | SOIC-8 |
Mounting Method: | Surface Mount |
2500
3.9398
9849.5
5000
3.7224
18612
7500
3.5807
26855.25
10000
3.3632
33632
12500
3.2216
40270