TYPE | DESCRIPTION |
Fet Type: | P-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | -40V |
Drain-Source On Resistance-Max: | 18MΩ |
Rated Power Dissipation: | 2.1W |
Qg Gate Charge: | 68.6nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | -10.3A |
Turn-on Delay Time: | 5.3ns |
Turn-off Delay Time: | 126ns |
Rise Time: | 20ns |
Fall Time: | 83ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | -3V |
Technology: | Si |
Height - Max: | 0.8mm |
Length: | 3.35mm |
Input Capacitance: | 3426pF |
Package Style: | POWERDI3333-8 |
Mounting Method: | Surface Mount |
2000
5.7351
11470.2
4000
5.4418
21767.2
6000
5.2245
31347
8000
4.9412
39529.6