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| TYPE | DESCRIPTION |
| Fet Type: | P-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 30V |
| Drain-Source On Resistance-Max: | 20mΩ |
| Rated Power Dissipation: | 1.4W |
| Qg Gate Charge: | 16.5nC |
| Gate-Source Voltage-Max [Vgss]: | 25V |
| Drain Current: | 11.4A |
| Turn-on Delay Time: | 8.2ns |
| Turn-off Delay Time: | 65ns |
| Rise Time: | 14ns |
| Fall Time: | 31.6ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 1.7V |
| Input Capacitance: | 1931pF |
| Package Style: | SOIC-8 |
| Mounting Method: | Surface Mount |
2500
4.5821
11455.25
5000
4.3646
21823
7500
4.1572
31179
10000
3.9398
39398
12500
3.7224
46530
