TYPE | DESCRIPTION |
Fet Type: | P-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | -20V |
Drain-Source On Resistance-Max: | 3Ω |
Rated Power Dissipation: | 360mW |
Qg Gate Charge: | 0.8nC |
Gate-Source Voltage-Max [Vgss]: | 8V |
Drain Current: | -330mA |
Turn-on Delay Time: | 10.3ns |
Turn-off Delay Time: | 330ns |
Rise Time: | 37.3ns |
Fall Time: | 163ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | -1V |
Technology: | Si |
Height - Max: | 0.4mm |
Length: | 0.65mm |
Input Capacitance: | 49pF |
Package Style: | XFDFN-3 |
Mounting Method: | Surface Mount |
10000
0.8398
8398
20000
0.6967
13934
30000
0.6839
20517
50000
0.6802
34010
100000
0.6759
67590