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| TYPE | DESCRIPTION |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 40V |
| Drain-Source On Resistance-Max: | 0.059Ω |
| Rated Power Dissipation: | 2.8W |
| Qg Gate Charge: | 8nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 7.2A |
| Turn-on Delay Time: | 2.7ns |
| Turn-off Delay Time: | 14ns |
| Rise Time: | 2.7ns |
| Fall Time: | 6ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 3V |
| Technology: | Si |
| Height - Max: | 1.75mm |
| Length: | 5mm |
| Input Capacitance: | 453pF |
| Package Style: | SOIC-8 |
| Mounting Method: | Surface Mount |
2500
4.6579
11644.75
5000
4.4405
22202.5
7500
4.223
31672.5
10000
4.0156
40156
.jpg "HF115F/110-2ZS4 (257)")
.jpg "DF63M-4P-3.96DSA(01)")
