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| TYPE | DESCRIPTION |
| Fet Type: | Dual N-Ch |
| No of Channels: | 2 |
| Drain-to-Source Voltage [Vdss]: | 40V |
| Drain-Source On Resistance-Max: | 31mΩ |
| Rated Power Dissipation: | 1.42W |
| Qg Gate Charge: | 18.6nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 5.2A |
| Turn-on Delay Time: | 6.4ns |
| Turn-off Delay Time: | 19.8ns |
| Rise Time: | 9.7ns |
| Fall Time: | 3.1ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 2.4V |
| Input Capacitance: | 945pF |
| Package Style: | SOIC-8 |
| Mounting Method: | Surface Mount |
2500
3.4391
8597.75
5000
2.7796
13898
7500
2.7552
20664
10000
2.7381
27381
12500
2.721
34012.5
