TYPE | DESCRIPTION |
Fet Type: | Dual N-Ch |
No of Channels: | 2 |
Drain-to-Source Voltage [Vdss]: | 40V |
Drain-Source On Resistance-Max: | 0.047Ω |
Rated Power Dissipation: | 2.14W |
Qg Gate Charge: | 6.3nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 7.1A |
Turn-on Delay Time: | 3.1ns |
Turn-off Delay Time: | 15.4ns |
Rise Time: | 3.1ns |
Fall Time: | 7.5ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 3V |
Technology: | Si |
Height - Max: | 1.75mm |
Length: | 4.95mm |
Input Capacitance: | 604pF |
Package Style: | SOIC-8 |
Mounting Method: | Surface Mount |
2500
5.5177
13794.25
5000
5.2245
26122.5
7500
4.9412
37059
10000
4.7237
47237