TYPE | DESCRIPTION |
Fet Type: | Dual N-Ch |
Drain-to-Source Voltage [Vdss]: | 40V |
Drain-Source On Resistance-Max: | 24mΩ |
Rated Power Dissipation: | 1.3|W |
Qg Gate Charge: | 19.1nC |
Package Style: | SOIC-8 |
Mounting Method: | Surface Mount |
2500
6.6607
16651.75
5000
6.3775
31887.5
7500
6.0184
45138
10000
5.7351
57351