TYPE | DESCRIPTION |
Fet Type: | Dual N-Ch |
Drain-to-Source Voltage [Vdss]: | 40V |
Drain-Source On Resistance-Max: | 24mΩ |
Rated Power Dissipation: | 1.3|W |
Qg Gate Charge: | 19.1nC |
Package Style: | SOIC-8 |
Mounting Method: | Surface Mount |
2500
11.1771
27942.75
5000
9.0225
45112.5
7500
8.9567
67175.25