TYPE | DESCRIPTION |
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 30V |
Drain-Source On Resistance-Max: | 48mΩ |
Rated Power Dissipation: | 1.4W |
Qg Gate Charge: | 20nC |
Gate-Source Voltage-Max [Vgss]: | 12V |
Drain Current: | 5.8A |
Turn-on Delay Time: | 1.5ns |
Turn-off Delay Time: | 13.9ns |
Rise Time: | 5ns |
Fall Time: | 7ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 1.4V |
Technology: | Si |
Height - Max: | 1mm |
Length: | 3mm |
Input Capacitance: | 570pF |
3000
1.5364
4609.2
9000
1.2761
11484.9
12000
1.2625
15150
30000
1.2403
37209
45000
1.2353
55588.5