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| TYPE | DESCRIPTION |
| Fet Type: | Dual N-Ch |
| No of Channels: | 2 |
| Drain-to-Source Voltage [Vdss]: | 20V |
| Drain-Source On Resistance-Max: | 35mΩ |
| Rated Power Dissipation: | 1.2W |
| Qg Gate Charge: | 10.4nC |
| Gate-Source Voltage-Max [Vgss]: | 8V |
| Drain Current: | 5.8A |
| Turn-on Delay Time: | 16.5ns |
| Turn-off Delay Time: | 119.3ns |
| Rise Time: | 33.3ns |
| Fall Time: | 53.5ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 1.5V |
| Technology: | Si |
| Height - Max: | 1.75mm |
| Length: | 4.95mm |
| Input Capacitance: | 1171pF |
| Package Style: | SOIC-8 |
| Mounting Method: | Surface Mount |
2500
2.3032
5758
5000
1.9369
9684.5
10000
1.9027
19027
12500
1.8955
23693.75
37500
1.844
69150
