取消
| TYPE | DESCRIPTION |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 30V |
| Drain-Source On Resistance-Max: | 29MΩ |
| Rated Power Dissipation: | 1.42W |
| Qg Gate Charge: | 4.7nC |
| Gate-Source Voltage-Max [Vgss]: | 25V |
| Drain Current: | 10A |
| Turn-on Delay Time: | 4.76ns |
| Turn-off Delay Time: | 19.5ns |
| Rise Time: | 3.64ns |
| Fall Time: | 4.9ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 2V |
| Technology: | Si |
| Height - Max: | 1.5mm |
| Length: | 4.95mm |
| Input Capacitance: | 493.5pF |
| Package Style: | MSOIC-8 |
| Mounting Method: | Surface Mount |
2500
1.6952
4238
7500
1.4013
10509.75
10000
1.3977
13977
25000
1.3641
34102.5
37500
1.3583
50936.25
