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| TYPE | DESCRIPTION |
| Fet Type: | P-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 20V |
| Drain-Source On Resistance-Max: | 150mΩ |
| Rated Power Dissipation: | 1.5W |
| Qg Gate Charge: | 5.5nC |
| Gate-Source Voltage-Max [Vgss]: | 8V |
| Drain Current: | 3A |
| Turn-on Delay Time: | 5ns |
| Turn-off Delay Time: | 30ns |
| Rise Time: | 10ns |
| Fall Time: | 20ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 1.2V |
| Technology: | Si |
| Height - Max: | 1mm |
| Length: | 3mm |
| Input Capacitance: | 476pF |
3000
0.8433
2529.9
9000
0.7031
6327.9
15000
0.6995
10492.5
45000
0.6824
30708
75000
0.6788
50910
