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| TYPE | DESCRIPTION |
| Fet Type: | Dual N-Ch |
| No of Channels: | 2 |
| Drain-to-Source Voltage [Vdss]: | 60V |
| Drain-Source On Resistance-Max: | 2.1Ω |
| Rated Power Dissipation: | 0.65W |
| Qg Gate Charge: | 0.45pC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 410mA |
| Turn-on Delay Time: | 3.4ns |
| Turn-off Delay Time: | 26.4ns |
| Rise Time: | 3.4ns |
| Fall Time: | 16.3ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 1.8V |
| Technology: | Si |
| Height - Max: | 0.6mm |
| Length: | 1.7mm |
| Input Capacitance: | 32pF |
| Package Style: | SOT-563 |
| Mounting Method: | Surface Mount |
3000
1.7367
5210.1
6000
1.4434
8660.4
12000
1.4242
17090.4
15000
1.4205
21307.5
45000
1.3848
62316
