TYPE | DESCRIPTION |
Fet Type: | Dual N/P-Ch |
Drain-to-Source Voltage [Vdss]: | 30V |
Drain-Source On Resistance-Max: | 32mΩ |
Rated Power Dissipation: | 2.5|W |
Qg Gate Charge: | 9.2nC |
Package Style: | SOIC-8 |
Mounting Method: | Surface Mount |
2500
2.8554
7138.5
5000
2.3204
11602
10000
2.296
22960
12500
2.2789
28486.25