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| TYPE | DESCRIPTION |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 40V |
| Drain-Source On Resistance-Max: | 24mΩ |
| Rated Power Dissipation: | 59.4W |
| Qg Gate Charge: | 11nC |
| Gate-Source Voltage-Max [Vgss]: | 15V |
| Drain Current: | 34A |
| Turn-on Delay Time: | 14.5ns |
| Turn-off Delay Time: | 40ns |
| Rise Time: | 35ns |
| Fall Time: | 24ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 1.5V |
| Technology: | TrenchMOS |
| Input Capacitance: | 719pF |
| Package Style: | SOT-669 |
| Mounting Method: | Surface Mount |
1500
8.8152
13222.8
3000
7.1614
21484.2
4500
7.0956
31930.2
6000
7.0198
42118.8
