TYPE | DESCRIPTION |
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 55V |
Drain-Source On Resistance-Max: | 19mΩ |
Rated Power Dissipation: | 85W |
Qg Gate Charge: | 18nC |
Gate-Source Voltage-Max [Vgss]: | 15V |
Drain Current: | 46A |
Turn-on Delay Time: | 18ns |
Turn-off Delay Time: | 44ns |
Rise Time: | 180ns |
Fall Time: | 134ns |
Operating Temp Range: | -55°C to +175°C |
Gate Source Threshold: | 2V |
Technology: | Si |
Height - Max: | 1.05mm |
Length: | 5mm |
Input Capacitance: | 1494pF |
1500
12.8207
19231.05
3000
10.4588
31376.4
4500
10.3172
46427.4
6000
10.2414
61448.4