TYPE | DESCRIPTION |
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 100V |
Drain-Source On Resistance-Max: | 18mΩ |
Rated Power Dissipation: | 167W |
Qg Gate Charge: | 39nC |
Gate-Source Voltage-Max [Vgss]: | 10V |
Drain Current: | 56A |
Turn-on Delay Time: | 18.5ns |
Turn-off Delay Time: | 59.6ns |
Rise Time: | 36.8ns |
Fall Time: | 34.3ns |
Operating Temp Range: | -55°C to +175°C |
Gate Source Threshold: | 1.7V |
Technology: | TrenchMOS |
Input Capacitance: | 3814pF |
Package Style: | SOT-669 |
Mounting Method: | Surface Mount |
1500
16.9022
25353.3
3000
13.6046
40813.8
4500
13.4631
60583.95