TYPE | DESCRIPTION |
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 80V |
Drain-Source On Resistance-Max: | 14mΩ |
Rated Power Dissipation: | 147W |
Qg Gate Charge: | 28.9nC |
Gate-Source Voltage-Max [Vgss]: | 10V |
Drain Current: | 62A |
Turn-on Delay Time: | 15.3ns |
Turn-off Delay Time: | 45.3ns |
Rise Time: | 24.6ns |
Fall Time: | 24.7ns |
Operating Temp Range: | -55°C to +175°C |
Technology: | TrenchMOS |
Input Capacitance: | 3479pF |
Package Style: | SOT-669 |
Mounting Method: | Surface Mount |
1500
15.1826
22773.9
3000
12.3201
36960.3
4500
12.1784
54802.8