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| TYPE | DESCRIPTION |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 60V |
| Drain-Source On Resistance-Max: | 8mΩ |
| Rated Power Dissipation: | 137W |
| Qg Gate Charge: | 29.8nC |
| Gate-Source Voltage-Max [Vgss]: | 10V |
| Drain Current: | 75A |
| Turn-on Delay Time: | 21ns |
| Turn-off Delay Time: | 32ns |
| Rise Time: | 56ns |
| Fall Time: | 46ns |
| Operating Temp Range: | -55°C to +175°C |
| Technology: | TrenchMOS |
| Input Capacitance: | 3263pF |
| Package Style: | TO-263-3 (D2PAK) |
| Mounting Method: | Surface Mount |
800
14.8993
11919.44
1600
12.1026
19364.16
2400
11.961
28706.4
3200
11.8952
38064.64
