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| TYPE | DESCRIPTION |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 100V |
| Drain-Source On Resistance-Max: | 72mΩ |
| Rated Power Dissipation: | 98W |
| Qg Gate Charge: | 24.3nC |
| Gate-Source Voltage-Max [Vgss]: | 15V |
| Drain Current: | 23A |
| Turn-on Delay Time: | 13ns |
| Turn-off Delay Time: | 58ns |
| Rise Time: | 120ns |
| Fall Time: | 57ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 1.5V |
| Technology: | TrenchMOS |
| Input Capacitance: | 1278pF |
| Package Style: | TO-263-3 (D2PAK) |
| Mounting Method: | Surface Mount |
800
11.1012
8880.96
1600
9.0984
14557.44
2400
9.0225
21654
3200
8.9567
28661.44
4000
8.8809
35523.6
