TYPE | DESCRIPTION |
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 80V |
Drain-Source On Resistance-Max: | 7.8mΩ |
Rated Power Dissipation: | 238W |
Qg Gate Charge: | 63.3nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 100A |
Turn-on Delay Time: | 16ns |
Turn-off Delay Time: | 43ns |
Rise Time: | 25ns |
Fall Time: | 24ns |
Operating Temp Range: | -55°C to +175°C |
Technology: | TrenchMOS |
Input Capacitance: | 4010pF |
Package Style: | SOT-669 |
Mounting Method: | Surface Mount |
1500
20.6244
30936.6