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| TYPE | DESCRIPTION |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 75V |
| Drain-Source On Resistance-Max: | 18mΩ |
| Rated Power Dissipation: | 105W |
| Qg Gate Charge: | 35nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 49A |
| Turn-on Delay Time: | 18.5ns |
| Turn-off Delay Time: | 44.5ns |
| Rise Time: | 22.5ns |
| Fall Time: | 19.8ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 3V |
| Technology: | TrenchMOS |
| Input Capacitance: | 1630pF |
| Package Style: | SOT-669 |
| Mounting Method: | Surface Mount |
1500
10.818
16227
3000
8.8152
26445.6
4500
8.7394
39327.3
6000
8.6636
51981.6
