TYPE | DESCRIPTION |
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 75V |
Drain-Source On Resistance-Max: | 18mΩ |
Rated Power Dissipation: | 105W |
Qg Gate Charge: | 35nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 49A |
Turn-on Delay Time: | 18.5ns |
Turn-off Delay Time: | 44.5ns |
Rise Time: | 22.5ns |
Fall Time: | 19.8ns |
Operating Temp Range: | -55°C to +175°C |
Gate Source Threshold: | 3V |
Technology: | TrenchMOS |
Input Capacitance: | 1630pF |
Package Style: | SOT-669 |
Mounting Method: | Surface Mount |
1500
17.6203
26430.45
3000
14.257
42771
4500
14.1154
63519.3