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| TYPE | DESCRIPTION |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 40V |
| Drain-Source On Resistance-Max: | 10mΩ |
| Rated Power Dissipation: | 62kW |
| Qg Gate Charge: | 19.5nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 56A |
| Turn-on Delay Time: | 5.7ns |
| Turn-off Delay Time: | 14.4ns |
| Rise Time: | 8.7ns |
| Fall Time: | 8.9ns |
| Operating Temp Range: | -55°C to +175°C |
| Technology: | TrenchMOS |
| Input Capacitance: | 926pF |
| Mounting Method: | Surface Mount |
1500
5.017
7525.5
3000
4.7237
14171.1
4500
4.5163
20323.35
7500
4.2988
32241
