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BSZ097N04LSGATMA1


：	BSZ097N04LSGATMA1
：	Mosfets
：	Infineon
：	Single N-Channe
：	-
：	Reel
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
No of Channels:	1
Drain-to-Source Voltage [Vdss]:	40V
Drain-Source On Resistance-Max:	9.7mΩ
Rated Power Dissipation:	2.1W
Qg Gate Charge:	18nC
Gate-Source Voltage-Max [Vgss]:	20V
Drain Current:	12A
Turn-on Delay Time:	3.5ns
Turn-off Delay Time:	16ns
Rise Time:	2.4ns
Fall Time:	2.8ns
Operating Temp Range:	-55°C to +150°C
Gate Source Threshold:	2V
Technology:	OptiMOS
Input Capacitance:	1400pF
Package Style:	TSDSON-8
Mounting Method:	Surface Mount

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