TYPE | DESCRIPTION |
Fet Type: | P-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 30V |
Drain-Source On Resistance-Max: | 0.9Ω |
Rated Power Dissipation: | 417mW |
Qg Gate Charge: | 2.9nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 0.52A |
Turn-on Delay Time: | 2ns |
Turn-off Delay Time: | 45ns |
Rise Time: | 4.5ns |
Fall Time: | 20ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 1.9V |
Technology: | Si |
Input Capacitance: | 80pF |
Package Style: | SOT-23 (SC-59,TO-236) |
Mounting Method: | Surface Mount |
3000
1.8025
5407.5
6000
1.5021
9012.6
12000
1.4849
17818.8
15000
1.4778
22167
45000
1.4434
64953