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| TYPE | DESCRIPTION |
| Fet Type: | P-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 30V |
| Drain-Source On Resistance-Max: | 0.9Ω |
| Rated Power Dissipation: | 417mW |
| Qg Gate Charge: | 2.9nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 0.52A |
| Turn-on Delay Time: | 2ns |
| Turn-off Delay Time: | 45ns |
| Rise Time: | 4.5ns |
| Fall Time: | 20ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 1.9V |
| Technology: | Si |
| Input Capacitance: | 80pF |
| Package Style: | SOT-23 (SC-59,TO-236) |
| Mounting Method: | Surface Mount |
3000
1.8025
5407.5
6000
1.5021
9012.6
12000
1.4849
17818.8
15000
1.4778
22167
45000
1.4434
64953
