TYPE | DESCRIPTION |
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 20V |
Drain-Source On Resistance-Max: | 200mΩ |
Rated Power Dissipation: | 417mW |
Qg Gate Charge: | 3.9nC |
Gate-Source Voltage-Max [Vgss]: | 8V |
Drain Current: | 1.05A |
Turn-on Delay Time: | 2ns |
Turn-off Delay Time: | 45ns |
Rise Time: | 4.5ns |
Fall Time: | 20ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 0.57V |
Technology: | Si |
Input Capacitance: | 152pF |
Package Style: | SOT-23 (SC-59,TO-236) |
Mounting Method: | Surface Mount |
3000
2.8383
8514.9
6000
2.3032
13819.2
9000
2.296
20664
12000
2.2789
27346.8
15000
2.2617
33925.5