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晶体管
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离散器
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金属氧化物半导体场效应晶体管
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ATP304-TL-H
ATP304-TL-H
:
ATP304-TL-H
:
Mosfets
:
onsemi
:
P Channel 60 V
:
-
:
Reel
:
-
TYPE
DESCRIPTION
Fet Type:
P-Ch
Drain-to-Source Voltage [Vdss]:
60V
Drain-Source On Resistance-Max:
6.5mΩ
Rated Power Dissipation:
90|W
Qg Gate Charge:
250nC
Mounting Method:
Surface Mount
PDF(1)
3000
33.2378
99713.4
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