TYPE | DESCRIPTION |
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 60V |
Drain-Source On Resistance-Max: | 13.5Ω |
Rated Power Dissipation: | 540mW |
Qg Gate Charge: | 223pC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 210mA |
Turn-on Delay Time: | 2.8ns |
Turn-off Delay Time: | 7.6ns |
Rise Time: | 3ns |
Fall Time: | 5.6ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 2.5V |
Technology: | Si |
Height - Max: | 1.1mm |
Length: | 3mm |
Input Capacitance: | 22pF |
Package Style: | SOT-23 (SC-59,TO-236) |
Mounting Method: | Surface Mount |
3000
0.5422
1626.6
9000
0.4585
4126.5
30000
0.4435
13305
60000
0.4406
26436
120000
0.4378
52536