SIGC100T60R3EX1SA1 IGBTs_Inventory of electronic components_Electronic equipment_Power management

SIGC100T60R3EX1SA1


：	SIGC100T60R3EX1SA1
：	IGBTs
：	Infineon
：	WAFER SAWN IGBT
：	-
：	Die
：	-

TYPE	DESCRIPTION
CE Voltage-Max:	600V
Gate - Emitter Voltage:	20V
Pulsed Collector Current:	600A
Collector - Emitter Saturation Voltage:	1.45V
Leakage Current:	600nA
Input Capacitance:	12335pF
Operating Temp Range:	-40°C to +175°C
Mounting Method:	Surface Mount

251.8425

235.3752

1176.876

219.8993

5497.4825

209.8754

15740.655

200

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