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IKW50N65ES5XKSA1

  • IKW50N65ES5XKSA1
  • IKW50N65ES5XKSA1
IKW50N65ES5XKSA1
IGBTs
Infineon
IKW50N65ES5 Ser
-
Tube
-
TYPEDESCRIPTION
CE Voltage-Max:650V
Collector Current @ 25C:80A
Power Dissipation-Tot:274W
Gate - Emitter Voltage:20V
Pulsed Collector Current:200A
Collector - Emitter Saturation Voltage:1.35V
Turn-on Delay Time:20ns
Turn-off Delay Time:127ns
Qg Gate Charge:120nC
Reverse Recovery Time-Max:70ns
Leakage Current:100nA
Input Capacitance:3100pF
Operating Temp Range:-40°C to +175°C
No of Terminals:3
Package Style: TO-247-3
Mounting Method:Through Hole
PDF(1)

30

75.0632

2251.896

90

64.756

5828.04

150

63.6029

9540.435

600

60.882

36529.2

900

60.0222

54019.98

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