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SMSD602-RT1G

  • SMSD602-RT1G
  • SMSD602-RT1G
  • SMSD602-RT1G
  • SMSD602-RT1G
  • SMSD602-RT1G
  • SMSD602-RT1G
SMSD602-RT1G
General Purpose (BJT) Transistors
onsemi
MSD602-RT1 Seri
-
Reel
-
TYPEDESCRIPTION
Polarity:NPN
CE Voltage-Max:50V
Collector Current Max:500mA
Collector - Emitter Saturation Voltage:0.6V
Collector - Base Voltage:60V
Power Dissipation-Tot:200mW
Package Style: SOT-23 (SC-59,TO-236)
Mounting Method:Surface Mount
PDF(1)

3000

0.9428

2828.4

9000

0.7196

6476.4

15000

0.7038

10557

45000

0.6824

30708

75000

0.6774

50805

NXP USA Inc.
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Mitsumi Electric Company Ltd
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