050-7626 Rev A 12-2007
APT100GN120B2
TYPICAL PERFORMANCE CURVES
MAXIMUM RATINGS All Ratings: T
C
= 25°C unless otherwise specifi ed.
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 4mA)
Gate Threshold Voltage (V
CE
= V
GE
, I
C
= 4mA, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 100A, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 100A, T
j
= 125°C)
Collector Cut-off Current (V
CE
= 1200V, V
GE
= 0V, T
j
= 25°C)
2
Collector Cut-off Current (V
CE
= 1200V, V
GE
= 0V, T
j
= 125°C)
2
Gate-Emitter Leakage Current (V
GE
= ±20V)
Integrated Gate Resistor
Symbol
V
(BR)CES
V
GE(TH)
V
CE(ON)
I
CES
I
GES
R
G(int)
Units
Volts
µA
nA
Ω
Symbol
V
CES
V
GE
I
C1
I
C2
I
CM
SSOA
P
D
T
J
,T
STG
T
L
APT100GN120B2
1200
±30
245
100
300
300A @ 1200V
960
-55 to 150
300
UNIT
Volts
Amps
Watts
°C
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
C
= 25°C
8
Continuous Collector Current @ T
C
= 110°C
8
Pulsed Collector Current
1
Switching Safe Operating Area @ T
J
= 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra
low V
CE(ON)
and are ideal for low frequency applications that require absolute minimum
conduction loss. Easy paralleling is a result of very tight parameter distribution and
a slightly positive V
CE(ON)
temperature coeffi cient. A built-in gate resistor ensures
extremely reliable operation, even in the event of a short circuit fault. Low gate charge
simplifi es gate drive design and minimizes losses.
• 1200V Field Stop
• Trench Gate: Low V
CE(on)
• Easy Paralleling
• Integrated Gate Resistor: Low EMI, High Reliability
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MIN TYP MAX
1200
5.0 5.8 6.5
1.4 1.7 2.1
2.0
100
TBD
600
7.5
G
C
E
1200V
APT100GN120B2
APT100GN120B2G*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
®
T-Max
G
C
E
®
050-7626 Rev A 12-2007
APT100GN120B2
1
Repetitive Rating: Pulse width limited by maximum junction temperature.
2
For Combi devices, I
ces
includes both IGBT and FRED leakages
3
See MIL-STD-750 Method 3471.
4
E
on1
is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in fi gure 21, but with a Silicon Carbide diode.
5
E
on2
is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6
E
off
is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
7 R
G
is external gate resistance, not including R
G(int)
nor gate driver impedance. (MIC4452)
8 Continuous Current limited by package lead temperature.
Microsemi reserves the right to change, without notice, the specifi cations and information contained herein.
DYNAMIC CHARACTERISTICS
Symbol
C
ies
C
oes
C
res
V
GEP
Q
g
Q
ge
Q
gc
SSOA
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
Test Conditions
Capacitance
V
GE
= 0V, V
CE
= 25V
f = 1 MHz
Gate Charge
V
GE
= 15V
V
CE
= 600V
I
C
= 100A
T
J
= 150°C, R
G
= 4.3Ω
7
, V
GE
=
15V, L = 100µH,V
CE
= 1200V
Inductive Switching (25°C)
V
CC
= 800V
V
GE
= 15V
I
C
= 100A
R
G
= 1.0Ω
7
T
J
= +25°C
Inductive Switching (125°C)
V
CC
= 800V
V
GE
= 15V
I
C
= 100A
R
G
= 1.0Ω
7
T
J
= +125°C
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge
3
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Switching Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
4
Turn-on Switching Energy (Diode)
5
Turn-off Switching Energy
6
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
4
4
Turn-on Switching Energy (Diode)
55
Turn-off Switching Energy
66
MIN TYP MAX
6500
365
280
9.5
540
50
295
300
50
50
615
105
11
15
9.5
50
50
725
210
12
22
14
UNIT
pF
V
nC
A
ns
mJ
ns
mJ
THERMAL AND MECHANICAL CHARACTERISTICS
UNIT
°C/W
gm
MIN TYP MAX
.13
N/A
6.1
Characteristic
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
Symbol
R
θ
JC
R
θ
JC
W
T
050-7626 Rev A 12-2007
APT100GN120B2
TYPICAL PERFORMANCE CURVES
V
GS(TH)
, THRESHOLD VOLTAGE V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V) I
C
, COLLECTOR CURRENT (A) I
C
, COLLECTOR CURRENT (A)
(NORMALIZED)
I
C,
DC COLLECTOR CURRENT(A) V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V) V
GE
, GATE-TO-EMITTER VOLTAGE (V) I
C
, COLLECTOR CURRENT (A)
250µs PULSE
TEST<0.5 % DUTY
CYCLE
300
250
200
150
100
50
0
300
250
200
150
100
50
0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
0 1.0 2.0 3.0 4.0 5.0 0 5 10 15 20 25 30
0 2 4 6 8 10 12 14 0 100 200 300 400 500 600
8 10 12 14 16 -50 -25 0 25 50 75 100 125 150
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
300
250
200
150
100
50
0
16
14
12
10
8
6
4
2
0
3.5
3
2.5
2
1.5
1
0.5
0
350
300
250
200
150
100
50
0
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V) V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(T
J
= 25°C) FIGURE 2, Output Characteristics (T
J
= 125°C)
V
GE
, GATE-TO-EMITTER VOLTAGE (V) GATE CHARGE (nC)
FIGURE 3, Transfer Characteristics FIGURE 4, Gate Charge
V
GE
, GATE-TO-EMITTER VOLTAGE (V) T
J
, Junction Temperature (°C)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage FIGURE 6, On State Voltage vs Junction Temperature
T
J
, JUNCTION TEMPERATURE (°C) T
C
, CASE TEMPERATURE (°C)
FIGURE 7, Threshold Voltage vs. Junction Temperature FIGURE 8, DC Collector Current vs Case Temperature
15V
9V
8V
7V
11V
T
J
= 125°C
T
J
= 25°C
T
J
= -55°C
V
GE
= 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
T
J
= 125°C
T
J
= 25°C
T
J
= -55°C
T
J
= 175°C
V
GE
= 15V
10V
V
CE
= 600V
V
CE
= 240V
I
C
= 100A
T
J
= 25°C
V
CE
= 960V
T
J
= 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
I
C
= 200A
I
C
= 100A
I
C
= 50A
I
C
= 200A
I
C
= 100A
I
C
= 50A
12V
13V
T
J
= 150°C
Lead Temperature
Limited
