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| TYPE | DESCRIPTION |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 200V |
| Drain-Source On Resistance-Max: | 0.034Ω |
| Rated Power Dissipation: | 190W |
| Qg Gate Charge: | 84nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 75A |
| Turn-on Delay Time: | 53ns |
| Turn-off Delay Time: | 75ns |
| Rise Time: | 33ns |
| Fall Time: | 29ns |
| Operating Temp Range: | -50°C to +150°C |
| Gate Source Threshold: | 4V |
| Technology: | Si |
| Height - Max: | 9.52mm |
| Length: | 10.4mm |
| Input Capacitance: | 3260pF |
| Package Style: | TO-220-3 (TO-220AB) |
| Mounting Method: | Through Hole |
50
47.2997
2364.985
150
40.5411
6081.165
250
39.9636
9990.9
1000
38.241
38241
1500
37.8154
56723.1
