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STP4N90K5

  • STP4N90K5
  • STP4N90K5
STP4N90K5
Mosfets
STMicroelectronics
STP4N90K5 Serie
-
Tube
-
TYPEDESCRIPTION
Fet Type:N-Ch
No of Channels:1
Drain-to-Source Voltage [Vdss]:900V
Drain-Source On Resistance-Max:2.1Ω
Rated Power Dissipation:60W
Qg Gate Charge:5.3nC
Gate-Source Voltage-Max [Vgss]:30V
Drain Current:3A
Turn-on Delay Time:10.5ns
Turn-off Delay Time:26.4ns
Rise Time:11.8ns
Fall Time:25.5ns
Operating Temp Range:-55°C to +150°C
Gate Source Threshold:4V
Technology:MDmesh
Input Capacitance:173pF
Package Style: TO-220-3 (TO-220AB)
Mounting Method:Through Hole
PDF(1)

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