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STP18N60M2

  • STP18N60M2
  • STP18N60M2
STP18N60M2
Mosfets
STMicroelectronics
N-channel 600 V
-
Tube
-
TYPEDESCRIPTION
Fet Type:N-Ch
Drain-to-Source Voltage [Vdss]:600V
Drain-Source On Resistance-Max:280mΩ
Rated Power Dissipation:110|W
Qg Gate Charge:21.5nC
Package Style: TO-220-3 (TO-220AB)
PDF(1)

50

21.4206

1071.03

200

18.401

3680.2

750

17.6817

13261.275

1250

17.3979

21747.375

2500

17.1041

42760.25

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