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STI150N10F7

  • STI150N10F7
  • STI150N10F7
STI150N10F7
Mosfets
STMicroelectronics
N-Channel 100 V
-
Tube
-
TYPEDESCRIPTION
Fet Type:N-Ch
No of Channels:1
Drain-to-Source Voltage [Vdss]:100V
Drain-Source On Resistance-Max:4.2mΩ
Rated Power Dissipation:250W
Qg Gate Charge:117nC
Gate-Source Voltage-Max [Vgss]:20V
Drain Current:110A
Turn-on Delay Time:33ns
Turn-off Delay Time:72ns
Rise Time:57ns
Fall Time:33ns
Operating Temp Range:-55°C to +175°C
Gate Source Threshold:4.5V
Input Capacitance:8115pF
Package Style: TO-262 (I2PAK)
Mounting Method:Through Hole
PDF(1)

50

33.9245

1696.225

150

29.3242

4398.63

500

28.321

14160.5

1000

27.7435

27743.5

2000

27.176

54352

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