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晶体管
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离散器
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金属氧化物半导体场效应晶体管
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STD2NK90Z-1
STD2NK90Z-1
:
STD2NK90Z-1
:
Mosfets
:
STMicroelectronics
:
N-Channel 900 V
:
-
:
Tube
:
-
TYPE
DESCRIPTION
Fet Type:
N-Ch
Drain-to-Source Voltage [Vdss]:
900V
Drain-Source On Resistance-Max:
6.5Ω
Rated Power Dissipation:
70|W
Qg Gate Charge:
19.5nC
Package Style:
TO-251 (IPAK)
Mounting Method:
Through Hole
PDF(1)
75
14.804
1110.3
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