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晶体管
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离散器
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金属氧化物半导体场效应晶体管
/
SPP17N80C3XKSA1
SPP17N80C3XKSA1
:
SPP17N80C3XKSA1
:
Mosfets
:
Infineon
:
Single N-Channe
:
-
:
Tube
:
-
TYPE
DESCRIPTION
Fet Type:
N-Ch
Drain-to-Source Voltage [Vdss]:
800V
Drain-Source On Resistance-Max:
290mΩ
Rated Power Dissipation:
227|W
Qg Gate Charge:
88nC
Package Style:
TO-220-3 (TO-220AB)
Mounting Method:
Through Hole
PDF(1)
50
70.7366
3536.83
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