SIHP25N50E-GE3 Mosfets_Inventory of electronic components_Electronic equipment_Power management

SIHP25N50E-GE3


：	SIHP25N50E-GE3
：	Mosfets
：	Vishay
：	SIHP25N50E Seri
：	-
：	Tube
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	500V
Drain-Source On Resistance-Max:	145mΩ
Rated Power Dissipation:	250\|W
Qg Gate Charge:	57nC
Package Style:	TO-220-3 (TO-220AB)
Mounting Method:	Through Hole

PDF(1)

31.9181

1595.905

2000

25.5952

51190.4

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