SIHD6N65E-GE3 Mosfets_Inventory of electronic components_Electronic equipment_Power management

SIHD6N65E-GE3


：	SIHD6N65E-GE3
：	Mosfets
：	Vishay
：	E Series N-Chan
：	-
：	Tube
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	650V
Drain-Source On Resistance-Max:	600mΩ
Rated Power Dissipation:	78\|W
Qg Gate Charge:	24nC
Package Style:	TO-252-3 (DPAK)
Mounting Method:	Surface Mount

PDF(1)

3000

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