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SIHB15N65E-GE3

  • SIHB15N65E-GE3
  • SIHB15N65E-GE3
SIHB15N65E-GE3
Mosfets
Vishay
E Series N-Chan
-
Tube
-
TYPEDESCRIPTION
Fet Type:N-Ch
Drain-to-Source Voltage [Vdss]:650V
Drain-Source On Resistance-Max:280mΩ
Rated Power Dissipation:34|W
Qg Gate Charge:48nC
Package Style: TO-263-3 (D2PAK)
Mounting Method:Surface Mount
PDF(1)

50

37.5216

1876.08

2000

30.0437

60087.4

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