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晶体管
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离散器
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金属氧化物半导体场效应晶体管
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PSMN2R0-30YL,115
PSMN2R0-30YL,115
:
PSMN2R0-30YL,115
:
Mosfets
:
Nexperia
:
N-Channel 30 V
:
-
:
Reel
:
-
TYPE
DESCRIPTION
Fet Type:
N-Ch
Drain-to-Source Voltage [Vdss]:
30V
Drain-Source On Resistance-Max:
2mΩ
Rated Power Dissipation:
97|W
Qg Gate Charge:
7.5nC
Mounting Method:
Surface Mount
PDF(1)
1500
24.5847
36877.05
3000
19.7002
59100.6
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