取消
| TYPE | DESCRIPTION |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 60V |
| Drain-Source On Resistance-Max: | 3.6mΩ |
| Rated Power Dissipation: | 230W |
| Qg Gate Charge: | 168nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 75A |
| Turn-on Delay Time: | 38ns |
| Turn-off Delay Time: | 133ns |
| Rise Time: | 74ns |
| Fall Time: | 75ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 3V |
| Technology: | TrenchMOS |
| Input Capacitance: | 8300pF |
| Package Style: | TO-263-3 (D2PAK) |
| Mounting Method: | Surface Mount |
800
45.1563
36125.04
