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| TYPE | DESCRIPTION |
| Fet Type: | Dual N-Ch |
| No of Channels: | 2 |
| Drain-to-Source Voltage [Vdss]: | 60V |
| Drain-Source On Resistance-Max: | 4.5Ω |
| Rated Power Dissipation: | 330mW |
| Qg Gate Charge: | 0.33nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 170mA |
| Turn-on Delay Time: | 6ns |
| Turn-off Delay Time: | 20ns |
| Rise Time: | 7ns |
| Fall Time: | 14ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 1.6V |
| Technology: | Si |
| Input Capacitance: | 11pF |
| Package Style: | SOT-363 (SC-70-6, SC-88) |
| Mounting Method: | Surface Mount |
3000
1.0169
3050.7
9000
0.8427
7584.3
15000
0.8384
12576
45000
0.8199
36895.5
75000
0.8156
61170
