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| TYPE | DESCRIPTION |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 1700V |
| Drain-Source On Resistance-Max: | 1Ω |
| Rated Power Dissipation: | 65W |
| Qg Gate Charge: | 11nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 6.4A |
| Turn-on Delay Time: | 8ns |
| Turn-off Delay Time: | 27ns |
| Rise Time: | 15ns |
| Fall Time: | 173ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 2.8V |
| Technology: | SiC |
| Input Capacitance: | 200pF |
| Package Style: | TO-263-7 (D2PAK7) |
| Mounting Method: | Surface Mount |
400
89.5634
35825.36
