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| TYPE | DESCRIPTION |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 1200V |
| Drain-Source On Resistance-Max: | 200mΩ |
| Rated Power Dissipation: | 125W |
| Qg Gate Charge: | 57nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 22A |
| Turn-on Delay Time: | 12ns |
| Turn-off Delay Time: | 19ns |
| Rise Time: | 8ns |
| Fall Time: | 14ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 2.8V |
| Technology: | SiC |
| Input Capacitance: | 870pF |
| Package Style: | TO-247-3 |
| Mounting Method: | Through Hole |
450
115.1586
51821.37
