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IXTQ100N25P

  • IXTQ100N25P
  • IXTQ100N25P
IXTQ100N25P
Mosfets
IXYS
N-Channel 250 V
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Tube
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TYPEDESCRIPTION
Fet Type:N-Ch
No of Channels:1
Drain-to-Source Voltage [Vdss]:250V
Drain-Source On Resistance-Max:27mΩ
Rated Power Dissipation:600W
Qg Gate Charge:185nC
Gate-Source Voltage-Max [Vgss]:20V
Drain Current:100A
Turn-on Delay Time:25ns
Turn-off Delay Time:100ns
Rise Time:26ns
Fall Time:28ns
Operating Temp Range:-55°C to +150°C
Gate Source Threshold:5V
Input Capacitance:6300pF
Package Style: TO-3P
Mounting Method:Through Hole
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